Design and implimentation of ALU by using GDI technique in 45 nm technology

With increasing contribution of performance of digital circuits is judged by its speed, run-time leakage control techniques are becoming extremely important. The most common technology for designing digital circuits is the CMOS technology. After the development of CMOS logic, there was increasing need to optimize circuits in terms of speed. One technique thought was using PTL which makes use of lesser number of gates to realize an operation. The Pass-Transistor Logic (PTL) is a better way to implement circuits designed for low power applications. Although PTL has disadvantages like it reduces the circuit speed at low power operations and greater static power dissipation. As the technology is growing gained the prominent importance. In this design of 1 bit ALU, GDI technology has been deliberately implemented. In this research work a new design of ALU by using GDI technique that can be used to design fast and low power circuits using lesser number of transistors. The total Design of ALU has been done by using GDI technique in 45 nm technology. The total Design process flow in Soc and the power is 0.044.