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Influence of deposition time and temperature on the forward bias current-voltage (i-v) characteristics of bi2s3 thin films

Author:

Balasubramanian, V., Chandrasekaran, J. and Prabahar, S.

Subject Area:

Physical Sciences and Engineering

Abstract:

Bi2S3 thin films have been prepared with different deposition time and temperature by chemical bath deposition method. The influence of deposition time and temperature of Bi2S3 films on I-V characteristics are investigated. The current increase with increase of the film thickness and current is directly proportional to the applied voltage. The decrease in resistivity is due to the improvement in the crystallinity of films, which increases the conductivity. It exhibits semiconducting nature of the films.

PDF file:

5986.pdf

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