The polycrystalline chalcogenide semi-conductors play a vital role in solar cell due to their flattering optical properties. Among the chalcogenide semi-conductors, CdZnS is one of such kind of materials, which is an imperative for applications in various modern solid state devices such as solar cells, light emitting diode, detector etc. Due to their applications in assortment of electro-optic devices, group II-VI semiconductors have been studied extensively. In recent years, major attention is given to the study of electrical and optical properties of CdZnS thin films. In this work, Cd1-xZnxS thin films were prepared by chemical bath deposition technique. Phase purity and surface morphology properties were analyzed using Field Emission Scanning Electron Microscope (FESEM) and X-ray diffraction (XRD) studies. Chemical composition was studied using energy dispersive spectrophotometer (EDAX). Optical band gap property was investigated using UV-Spectroscopy. This work reports the effect of Zn on structural, optical properties of these films.
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